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PD - 94360 IRFP32N50KS SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Low RDS(on) Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting torque, 6-32 or M3 screw HEXFET(R) Power MOSFET VDSS 500V RDS(on)typ. 0.135 ID 32A SMD-247 Max. 32 20 130 460 3.7 30 13 -55 to + 150 300 Units A W W/C V V/ns C 10lb*in (1.1N*m) Avalanche Characteristics Symbol EAS IAR EAR Parameter Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. --- --- --- Max. 450 32 46 Units mJ A mJ Thermal Resistance Symbol RJC RCS RJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. --- 0.24 --- Max. 0.26 --- 40 Units C/W www.irf.com 1 12/18/01 IRFP32N50KS Static @ TJ = 25C (unless otherwise specified) Symbol V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 500 --- --- V VGS = 0V, ID = 250A --- 0.54 --- V/C Reference to 25C, ID = 1mA --- 0.135 0.16 VGS = 10V, ID = 32A 3.0 --- 5.0 V VDS = V GS, ID = 250A --- --- 50 A VDS = 500V, VGS = 0V --- --- 250 A VDS = 400V, VGS = 0V, TJ = 150C --- --- 100 VGS = 30V nA --- --- -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 14 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 28 120 48 54 5280 550 45 5630 155 265 Max. Units Conditions --- S VDS = 50V, ID = 32A 190 ID = 32A 59 nC VDS = 400V 84 VGS = 10V --- VDD = 250V --- ID = 32A ns --- RG = 4.3 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 400V, = 1.0MHz --- VGS = 0V, VDS = 0V to 400V Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Reverse RecoveryCurrent Forward Turn-On Time Min. Typ. Max. Units --- --- --- --- 32 A 130 --- --- 1.5 V --- 530 800 ns --- 9.0 13.5 C --- 30 --- A Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 32A, V GS = 0V TJ = 25C, IF = 32A di/dt = 100A/s D S Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Starting TJ = 25C, L = 0.87mH, RG = 25, IAS = 32A, ISD 32A, di/dt 197A/s, VDD V(BR)DSS, TJ 150C 2 www.irf.com IRFP32N50KS 1000 VGS TOP 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V 100 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP I D, Drain-to-Source Current (A) 100 I D, Drain-to-Source Current (A) 10 10 5.0V 1 1 0.1 5.0V 20s PULSE WIDTH Tj = 25C 20s PULSE WIDTH Tj = 150C 0.1 100 0.1 1 10 100 0.01 0.1 1 10 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) 1000 3.0 ID = 32A I D , Drain-to-Source Current (A) 2.5 100 TJ = 150 C 2.0 10 1.5 TJ = 25 C 1 1.0 0.5 0.1 4 5 7 8 V DS = 50V 20s PULSE WIDTH 9 11 12 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFP32N50KS 100000 V GS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds Crss = Cgd Coss = Cds + Cgd 20 VGS , Gate-to-Source Voltage (V) SHORTED ID = 32A 16 10000 V DS = 400V V DS = 250V V DS = 100V C, Capacitance(pF) Ciss 12 1000 Coss 100 8 4 Crss 10 1 10 100 1000 0 0 40 80 120 160 200 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) TJ = 150 C ID , Drain Current (A) 100 100 10us 10 TJ = 25 C 1 100us 10 0.1 0.2 V GS = 0 V 0.6 0.9 1.3 1.6 1 TC = 25 C TJ = 150 C Single Pulse 10ms 10 100 1000 10000 1ms VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFP32N50KS 35 30 VDS VGS RG RD D.U.T. + ID , Drain Current (A) 25 20 15 10 5 0 25 50 75 100 125 150 -VDD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit VDS 90% TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.001 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 1 PDM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFP32N50KS 800 EAS , Single Pulse Avalanche Energy (mJ) 640 TOP BOTTOM ID 14A 20A 32A VDS L 1 5V 480 D R IV E R 320 RG 20V D .U .T IA S + V - DD A 160 tp 0 .0 1 Fig 12c. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 Starting T J , Junction Temperature ( C) Fig 12a. Maximum Avalanche Energy Vs. Drain Current tp V (B R )D SS IAS Fig 12d. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K 12V .2F .3F QG VGS D.U.T. + V - DS QGS VG QGD VGS 3mA IG ID Current Sampling Resistors Charge Fig 13a. Gate Charge Test Circuit Fig 13b. Basic Gate Charge Waveform 6 www.irf.com IRFP32N50KS Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs www.irf.com 7 IRFP32N50KS SMD-247 Package Outline A B 15.90 [.625] 15.30 [.603] 3.65 [.143] O 3.55 [.140] 0.25 [.010] 5.70 [.224] 5.30 [.209] DB 5.30 [.208] 4.70 [.186] 2.50 [.099] 1.50 [.060] 0.25 [.010] 13.70 [.539] 13.50 [.532] DB 5.50 [.217] 4 16.20 [.637] 16.00 [.630] 4 0.95 [.037] 0.35 [.014] 20.30 [.799] 19.70 [.776] 2.75 [.108] 2X R 2.25 [.089] D C 1 5.65 [.222] 4.65 [.183] 2 3 3.0 [.118] MAX. 0.20 [.225] D 5.45 [.215] 2X 0.25 [.010] 1.40 [.055] 1.00 [.040] DCA 2X 2.65 [.104] 2.15 [.085] LEAD AS SIGNMENT S NOT E S: 1. 2. 3. 4. DIME NSIONING & T OLERANCING PER AS ME Y14.5M-1994. CONT ROLLING DIME NSION: MILLIME T ER. DIMENS IONS ARE S HOWN IN MILLIMET E RS [INCHES ]. T O-247 S MD IS A MODIF IED T O-247AC. MOSF ET 1 - GAT E 2 - DRAIN 3 - SOURCE 4 - DRAIN IGBT 1 - GAT E 2 - COLLECT OR 3 - EMIT T ER 4 - COLLECT OR 2X 0.80 [.031] 0.40 [.016] SMD-247 Part Marking Information EXAMPLE: T HIS IS AN IRFP450S WITH AS S EMBLY LOT CODE 3A1Q PART NUMBER INTERNAT IONAL RECT IF IER LOGO AS S EMBLY LOT CODE IRFP450S 3A1Q 9906 DATE CODE (YYWW) YY = YEAR WW = WEEK Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/01 8 www.irf.com |
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